KTP Electro-optic Q-Switch

High Damage Threshold No Piezoelectric Ringing Low Insertion Loss Thermal Compensating Design Non-hygroscopic

Regular flux grown KTP has an electric resistivity as low as 106 W×cm, which may exhibit the detrimental electrochromism when subjected to a dc electric field. Electro-optic KTP (EO-KTP) crystals with high electrical resistivity (~1011-1012W·cm) have been grown successfully using our own proprietary technology. The electrochromism is not observed under a continuous 500V/mm Z-directed electric field over more than 1000 hours. The well-known isomorphs RTP performance given applies also to EO-KTP which has high damage threshold, large effective electro-optic coefficients and lower half-wave voltage. The Q-switch is built utilizing thermally compensated double-crystal designsAdvantages:

High Damage Threshold No Piezoelectric RingingLow Insertion LossThermal Compensating DesignNon-hygroscopicHigh Extinction and Contrast Ratio

Specifications

Spectral range:  350nm~4500nm

Half Wave Voltage at 1064 nm:            5x5x10 mm: ~1,600 V           8x8x10 mm: ~2,600 V           9x9x20 mm: ~1,450 V

Contrast ratio:  >2001

Aperture: from 2x2 mm² up to 15x15 mm²

Damage threshold: > 750MW/cm2 (@ 1064nm, 10ns, 10Hz)

AR coating: R < 0.2% @ 1064 nm

KTP Electro-optic Q-Switch